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SIJH5700E-T1-GE3
  • image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
  • image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
  • image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
  • image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
Part number SIJH5700E-T1-GE3
Product classification Single FETs, MOSFETs
Manufacturer Vishay / Siliconix
Type N-CHANNEL 150 V
Encapsulation -
Packing Tape & Reel (TR)
Quantity 0
RoHS 1
Inventory: 0
Total number

Quantity

Price

Total price

1

$7.5480

$7.5480

10

$6.3360

$63.3600

100

$5.1240

$512.4000

500

$4.5600

$2,280.0000

1000

$3.9000

$3,900.0000

2000

$3.6720

$7,344.0000

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image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
Part number
SIJH5700E-T1-GE3
Product classification
Single FETs, MOSFETs
Manufacturer
Vishay / Siliconix
N-CHANNEL 150 V
-
Tape & Reel (TR)
0
Product parameters
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TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesTrenchFET®
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CasePowerPAK® 8 x 8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs4.1mOhm @ 20A, 10V
Power Dissipation (Max)3.3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 75 V
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